Abstract
The paper presents a monolithically integrable CMOS back-end-of-line (BEOL) integrated MEMS Pirani gauge. The proposed idea is implemented using a TiN-C platform based on a 0.35 μm 2P4M commercial CMOS process. In the given implementation, TiN in the interconnect layer is explored as a heating element. Owing to the lower thermal conductivity (~4 W/m.K) of TiN, excellent thermal isolation of intermetal dielectric layers, and a narrow vertical conduction gap, the gauge exhibits a wide dynamic range from 26 Pa to 10 6 Pa. Experimental results of the fabricated devices are in excellent agreement with the simulated curve with a maximum error of 0.04%. Additionally, the fabricated gauge demonstrates excellent reproducibility while maintaining an acceptable error margin of ≤ 0.01 % over the entire range.
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